IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227

IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227

Manufacturer:
Manufacturer Part No:
IXFN32N100Q3
Enrgtech Part No:
ET100550133
Warranty:
Manufacturer
QAR 262.21 QAR 262.21
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
28A
Maximum Drain Source Voltage Vds:
1kV
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
320mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.4V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
195nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
780W
Maximum Operating Temperature:
150°C
Width:
25.07 mm
Height:
9.6mm
Length:
38.23mm
Standards/Approvals:
No
Distrelec Product Id:
30253369
Automotive Standard:
No
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0900766b812e62af.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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