Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW50N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Manufacturer:
Manufacturer Part No:
IKW50N65ES5XKSA1
Enrgtech Part No:
ET100027616
Warranty:
Manufacturer
QAR 19.10
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Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
274 W
Number of Transistors:
1
Package Type:
TO-247
Mounting Type:
Through Hole
Channel Type:
N
Pin Count:
3
Switching Speed:
30kHz
Transistor Configuration:
Single
Dimensions:
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
3100pF
Energy Rating:
1.78mJ
Maximum Operating Temperature:
+175 °C
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0900766b81579122.pdf(datasheets)
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0900766b81644faf.pdf(datasheets)



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